Work function engineering of ZnO electrodes by using p-type and n-type doped carbon nanotubes.
Identifieur interne : 000276 ( Main/Exploration ); précédent : 000275; suivant : 000277Work function engineering of ZnO electrodes by using p-type and n-type doped carbon nanotubes.
Auteurs : RBID : pubmed:24196784Abstract
Transparent electrodes in organic electronic devices are strongly needed in order to replace indium tin oxide (ITO). Some of the best candidates are ZnO films, which have shown both good electronic properties and solution processability compatible with roll-to-roll production of the devices. We present the possibility to engineer the work function of ZnO by blending it with carbon nanotubes (CNTs). B-doped (p-type), N-doped (n-type) and undoped CNTs as well as their blends with ZnO have been characterized by atomic force microscopy (AFM), scanning Kelvin probe microscopy (SKPM) and Raman spectroscopy. The results of Raman spectroscopy demonstrate the substitutional doping of carbon nanotubes, which preserves their covalent structure although increasing the disorder within the nanotubes. The roughness and average shape of grains of ZnO when blended with the doped nanotubes have been measured by AFM. Finally, SKPM shows that the work function of the blends can be engineered from 4.4 ± 0.1 to 4.9 ± 0.1 eV according to the kind of nanotube that is blended even if only a small amount of nanotubes is added to the blend (0.08 wt%).
DOI: 10.1088/0957-4484/24/48/484013
PubMed: 24196784
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Department of Electronics, Technical University of Cartagena, Plaza Hospital 1, 30202 Cartagena</wicri:regionArea></affiliation></author><author><name sortKey="Park, Ji Sun" uniqKey="Park J">Ji Sun Park</name></author><author><name sortKey="Lee, Ju Min" uniqKey="Lee J">Ju Min Lee</name></author><author><name sortKey="Kim, Sang Ouk" uniqKey="Kim S">Sang Ouk Kim</name></author><author><name sortKey="Kim, Ji Seon" uniqKey="Kim J">Ji-Seon Kim</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1088/0957-4484/24/48/484013</idno><idno type="RBID">pubmed:24196784</idno><idno type="pmid">24196784</idno><idno type="wicri:Area/Main/Corpus">000326</idno><idno type="wicri:Area/Main/Curation">000326</idno><idno type="wicri:Area/Main/Exploration">000276</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transparent electrodes in organic electronic devices are strongly needed in order to replace indium tin oxide (ITO). Some of the best candidates are ZnO films, which have shown both good electronic properties and solution processability compatible with roll-to-roll production of the devices. We present the possibility to engineer the work function of ZnO by blending it with carbon nanotubes (CNTs). B-doped (p-type), N-doped (n-type) and undoped CNTs as well as their blends with ZnO have been characterized by atomic force microscopy (AFM), scanning Kelvin probe microscopy (SKPM) and Raman spectroscopy. The results of Raman spectroscopy demonstrate the substitutional doping of carbon nanotubes, which preserves their covalent structure although increasing the disorder within the nanotubes. The roughness and average shape of grains of ZnO when blended with the doped nanotubes have been measured by AFM. Finally, SKPM shows that the work function of the blends can be engineered from 4.4 ± 0.1 to 4.9 ± 0.1 eV according to the kind of nanotube that is blended even if only a small amount of nanotubes is added to the blend (0.08 wt%).</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24196784</PMID><DateCreated><Year>2014</Year><Month>01</Month><Day>09</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>48</Issue><PubDate><Year>2013</Year><Month>Dec</Month><Day>6</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Work function engineering of ZnO electrodes by using p-type and n-type doped carbon nanotubes.</ArticleTitle><Pagination><MedlinePgn>484013</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/24/48/484013</ELocationID><Abstract><AbstractText>Transparent electrodes in organic electronic devices are strongly needed in order to replace indium tin oxide (ITO). Some of the best candidates are ZnO films, which have shown both good electronic properties and solution processability compatible with roll-to-roll production of the devices. We present the possibility to engineer the work function of ZnO by blending it with carbon nanotubes (CNTs). B-doped (p-type), N-doped (n-type) and undoped CNTs as well as their blends with ZnO have been characterized by atomic force microscopy (AFM), scanning Kelvin probe microscopy (SKPM) and Raman spectroscopy. The results of Raman spectroscopy demonstrate the substitutional doping of carbon nanotubes, which preserves their covalent structure although increasing the disorder within the nanotubes. The roughness and average shape of grains of ZnO when blended with the doped nanotubes have been measured by AFM. Finally, SKPM shows that the work function of the blends can be engineered from 4.4 ± 0.1 to 4.9 ± 0.1 eV according to the kind of nanotube that is blended even if only a small amount of nanotubes is added to the blend (0.08 wt%).</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Urbina</LastName><ForeName>Antonio</ForeName><Initials>A</Initials><Affiliation>Department of Physics and Centre for Plastic Electronics, Imperial College London, Prince Consort Road, London SW7 2AZ, UK. Department of Electronics, Technical University of Cartagena, Plaza Hospital 1, 30202 Cartagena, Spain.</Affiliation></Author><Author ValidYN="Y"><LastName>Park</LastName><ForeName>Ji Sun</ForeName><Initials>JS</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Ju Min</ForeName><Initials>JM</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Sang Ouk</ForeName><Initials>SO</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Ji-Seon</ForeName><Initials>JS</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>11</Month><Day>06</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>11</Month><Day>06</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>11</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>11</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>11</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/24/48/484013</ArticleId><ArticleId IdType="pubmed">24196784</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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